1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[B-2-1]Universal Model for Impurity Diffusion and Oxidation of Silicon

K. Taniguchi, Y. Shibata, C. Hamaguchi(1.Department of Electronics Engineering, Osaka University)
https://doi.org/10.7567/SSDM.1989.B-2-1