1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[B-2-2]A Composite lon-Implantation/Dopant Diffusion Simulation Involving Point Defect Kinetics and Its Application to Ultra Shallow Base Design
Takako K. OKADA, Koichi KATO(1.ULSI Research Center, Toshiba Corporation, 2.Research and Development Center, Toshiba Corporation)
