1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[B-2-4]Optimization of the Amorphous Layer Thickness and the Junction Depth on the Preamorphization Method for Shallow-Junction Formation
A. Tanaka, T. Yamaji, A. Uchiyama, T. Hayashi, T. Iwabuchi, S. Nishikawa(1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)
