1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
1989 Conference on Solid State Devices and Materials
Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
[B-2-5]Reduction of Thickness Secondary Defects in MeV Ion Implanted Silicon by Intrinsic Gettering
N. Shimizu, B. Mizuno, S. Akiyama, K. Tsuji, T. Ohzone(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
