1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1989 Conference on Solid State Devices and Materials

1989 Conference on Solid State Devices and Materials

Aug 28 - Aug 30, 1989Nippon Toshi Center, Tokyo, Japan

[B-4-1]Demands for Submicron MOSFET's and Nitrided Oxide Gate-Dielectrics

Takashi Hori(1.Basic Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.1989.B-4-1
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