1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1991 International Conference on Solid State Devices and Materials

1991 International Conference on Solid State Devices and Materials

Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan

[A-1-1]Hot Carrier Effects in nMOSFET at 77 K and 300 K

Toyoji YAMAMOTO, Yasushi NISHIMURA, Takahiro IIZUKA Hiroshi MATSUMOTO, Masao FUKUMA(1.Microelectronics Res. Labs., VLSI Development Div., NEC Corp., 2.NEC Scientific Information System Development Corp.)
https://doi.org/10.7567/SSDM.1991.A-1-1
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