[A-0-1]The Evolution of Semiconductor Quantum Structures Do-It-Yourself Quantum Mechanics
Leo Esaki(1.IBM Thomas J. Watson Research Center)
1991 International Conference on Solid State Devices and Materials
Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
You can search for presentations in this event.
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1991 International Conference on Solid State Devices and Materials
Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
You can search for presentations in this event.
SearchSearch Results(262)
[A-0-2]Defects in Semiconductors
George D. Watkins(1.Department of Physics 16 Lehigh University)
[A-0-3]Opto-Electronic Devices --What's Missing--
Tetsuhiko Ikegami(1.NTT Opto-electronics Laboratories)
[A-1-1]Hot Carrier Effects in nMOSFET at 77 K and 300 K
Toyoji YAMAMOTO, Yasushi NISHIMURA, Takahiro IIZUKA Hiroshi MATSUMOTO, Masao FUKUMA(1.Microelectronics Res. Labs., VLSI Development Div., NEC Corp., 2.NEC Scientific Information System Development Corp.)
[A-1-2]PMOSFET Hot-Carrier Degradation Analyzed Over Ten Orders of Magnitude
R. Woltjer, A. Hamada, E. Takeda(1.Philips Research Laboratories, 2.Central Research Laboratory, Hitachi Ltd)
[A-1-3]Spatial Distribution of Trapped Holes in the Oxide of MOSFETs after Uniform Hot-Hole Injection
QUAZI Deen Mohd Khosru, Naoki YASUDA, Akinori MARUYAMA, Kenji TANIGUCHI, Chihiro HAMAGUCHI(1.Department of Electronic Engineering, Osaka University)
[A-1-4]The Influence of Synchrotron X-Ray Damage on Hot-Carrier-Induced Degradation in Subquarter-Micron NMOSFETs
T. Tsuchiya, M. Harada, K. Deguchi, T. Matsuda(1.NTT LSI Laboratories)
[A-1-5]A Study of Hot-Carrier-Effects in SOI-MOSFETs Using Photon Emission
Takami Makino, Seiichiro Kawamura(1.ULSI R&D Division, FUJITSU LIMITED)
[A-2-1]Limits on Gate Insulator Thickness for MISFET Operation in Pure-Oxide and Nitrided-Oxide Gate Cases
T. Morimoto, H. S. Momose, M. Tsuchiaki, Y. Ozawa, K. Yamabe, H. Iwai(1.ULSI Research Center, Toshiba Corporation)
[A-2-2]A Comparative Study of High-Field Endurance for Reoxidized-Nitrided and Fluorinated Oxides
Z. H. Liu, P. Nee, P. K. Ko, C. Hu, C. G. Sodini, B. J. Gross, T. P. Ma, Y. C. Cheng(1.Department of EECS, University of California, 2.Department of EECS, Massachusetts Institute of Technology, 3.Department of Electrical Engineering, Yale University, 4.Directorate, City Polytechnic of Hong Kong)
[A-2-3]Investigation of the Atomic Structure of the SiO2/Si(111) Interface by MEIS (Medium-Energy Ion Scattering)
T. NISHIOKA, Y. SHINODA, C. HEIMLICH, Y. KOBAYASHI, H. HIBINO, K. SUGII(1.NTT Basic Research Laboratories)
[A-2-4]Modified Impact-Ionization Recombination Model under Dynamic Stress of Thin Oxide
Seiji Yamada, Kiyomi Naruke, Masashi Wada(1.Semiconductor Device Engineering Laboratory TOSHIBA Corporation)
[A-2-5]Strain Evaluation at the Si/SiO2 Interface Using ER Method
Pornchai YONGWATTANASOONTORN, Hitoshi KUBO, Masato MORIFUJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI Keitaro IMAI(1.Department of Electronic Engineering, Osaka University, 2.ULSI Research center, Toshiba Corporation)
[B-1-1]Low-Temperature Silicon Epitaxy without Substrate Heating and Selectivity Inversion in Ultraclean ECR Plasma Enhanced CVD
Takashi MATSUURA, Junichi MUROTA, Tadahiro OHMI, Shoichi ONO(1.Department of Electronics, Faculty of Engineering, Tohoku University, 2.Research Institute of Electrical Communication, Tohoku University)
[B-1-2]Ion Flux Effect in Low Temperature Silicon Epitaxy by Low-Energy Ion Bombardment
Tohru YOSHIE, Masaki HIRAYAMA, Tadahiro OHMI(1.Department of Electronics, Tohoku University)
[B-1-3]Amorphization Processes in Ion Implanted Si: Temperature Dependence
T. Motooka, F. Kobayashi, P. Fons, T. Tokuyama T. Suzuki, N. Natsuaki(1.University of Tsukuba, 2.Device Development Center, Hitachi, Ltd.)
[B-1-4]Rapid Vapor-Phase Direct Doping; Ultra-Shallow Junction Formation Method for High-Speed Bipolar and Highly-Integrated DRAM LSIs
Yukihiro Kiyota, Takahiro Onai, Tohru Nakamura, Taroh Inada, Atsushi Kuranouchi, Yasuaki Hirano(1.Central Research Laboratory, Hitachi, Ltd, 2.College of Engineering, Hosei University)
[B-1-5]An Analysis of p+-n Junction Capacitance with Three-Dimensional Impurity Profiling Method Using Scanning Tunneling Microscopy
M. Tanimoto, T. Douseki, T. Takigami(1.NTT LSI Laboratories)
[B-2-1]Novel Applications of Focused Ion Beam Technology
Masanori KOMURO(1.Electrotechnical Laboratory)
[B-2-2]Proximity Gettering of Micro-Defects by High Energy Ion Implantation
T. Kuroi, S. Komori, K. Fukumoto, Y. Mashiko, K. Tsukamoto, Y. Akasaka(1.LSI Laboratory, Mitsubishi Electric Corporation)
[B-2-3]Mechanism of Intrinsic Gettering of Iron in Silicon
M. Aoki, A. Hara, A. Ohsawa(1.FUJITSU LABORATORIES LTD.)
[B-2-4]The Effects of Hot Ion-Implantation on the Electrical Properties of Amorphous-Silicon Films Produced by CVD Method
Tsutomu SATOH, Hiroshi KANOH, Osamu SUGIURA, Masakiyo MATSUMURA(1.Department of Physical Electronics, Tokyo Institute of Technology)
[B-2-5]1 V・1 GHz Operating CMOS 1/8 Static Divider
Yuichi Kado, Masao Suzuki, Yukio Okazaki, Toshio Kobayashi(1.NTT LSI Laboratories)
[B-2-6]Analysis of Smear Noise in Interline-CCD Image Sensor with Gate-Free Isolation Structure
Hideyuki Ono, Toshifumi Ozaki, Haruhiko Tanaka, Yoshifumi Kawamoto(1.Central Research Laboratory, Hitachi Ltd.)
[C-1-1]GaAlAs/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application
P. M. Asbeck, M. F. Chang, K. C. Wang, G. J. Sullivan, J. A. Higgins(1.University of California, 2.Rockwell International)
[C-1-3]InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si Substrates
Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi(1.NTT Basic Research Laboratories, 2.NTT LSI Laboratories)
[C-1-4]High Power Density and High Efficiency AlGaAs/GaAs Heterojunction Bipolar Transistors for High Power MMICs
T. Shimura, M. Komaru, S. Izumi, T. Kuragaki, M. Sakai, H. Nakano, S. Terazono, K. Nagahama, K. Nishitani, M. Otsubo(1.Optoelectronic and Microwave Devices Lab. Mitsubishi Electric Corporation)
[C-1-5]Arithmetic Logic Circuits Using Resonant-Tunneling Hot Electron Transistors (RHETs)
Kenichi Imamura, Motomu Takatsu, Toshihiko Mori, Takami Adachihara, Hiroaki Ohnishi, Shunichi Muto, Naoki Yokoyama(1.Fujitsu Limited)
[C-2-1]Electron Wave Reflection by Multi-Quantum Barrier (MQB)
Takeshi TAKAGI, Fumio KOYAMA, Kenichi IGA(1.Tokyo Institute of Technology)
[C-2-2]Wigner Function Model of Quantum Transport in an Electron Waveguide
H. Tsuchiya, M. Ogawa, T. Miyoshi(1.Department of Electronic Engineering, Kobe University)
[C-2-3]Strain Induced Carrier Confinement in a Buried Stressor Structure
Z. Xu, M. Wassermeier, Y. J. Li, P. M. Petroff(1.Materials Department and Department of ECE University of California)
[C-2-4]Sub-Quarter Micron Gate Fabrication Process Using Phase-Shifting-Mask for Microwave GaAs Devices
Kazuyuki Inokuchi, Tadashi Saito, Hideyuki Jinbo, Yoshio Yamashita, Yoshiaki Sano(1.Research and Development Group, Oki Electric Industry Co., Ltd.)
[C-2-5]Investigation of Breakdown Location in GaAs MESFETs by Two-Dimensional Simulation and Emission Microscopy
Jayne Ashworth, Norbert Arnold(1.SIEMENS AG, Corporate Research and Development)
[D-1-1]Future Prospects of Opto-Electronic Devices and Processings
W. T. Tsang(1.AT&T Bell Laboratories)
[D-1-2]Extremely Low Damping K-Factor in Highly Detuned DFB Strained Layer MQW SA-CM Lasers
Masaaki ONOMURA, Yuzo HIRAYAMA, Motoyasu MORINAGA, Masahisa FUNEMIZU, Nobuo SUZUKI, Masaru NAKAMURA(1.Toshiba Research and Development Center)
[D-1-3]Flip-Chip GaInAs/InP Quad PIN Photodiodes for Polarization-Diversity Coherent Optical Receivers
Hisashi HAMAGUCHI, Masao MAKIUCHI, Akito KURAMATA, Takashi MIKAWA, Osamu WADA(1.Fujitsu Laboratories Ltd.)
[D-1-4]High-Speed Planar InP/InGaAs Avalanche Photodiodes with Optimized Electric Field Profile
Yasuhiro KITO, Haruhiko KUWATSUKA, Toru UCHIDA, Takashi MIKAWA(1.Fujitsu Laboratories Ltd.)
[D-2-1]Realization of Highly Reliable High-Power Operation of Single-Stripe AlGaAs Lasers by the Formation of Window Grown on Facets
Kazuaki SASAKI, Mitsuhiro MATSUMOTO, Masaki KONDO, Takashi ISHIZUMI, Tadashi TAKEOKA, Saburo YAMAMOTO, Toshiki HIJIKATA(1.Optical-Device Laboratories, Sharp Corporation, 2.Opto-Electronic Devices Division, Sharp Corporation)
[D-2-2]High Power Operation of InGaAlP Visible Light Laser Diodes with an In0.62Ga0.38P Active Layer
K. Nitta, K. Itaya, Y. Nishikawa, M. Ishikawa, M. Okajima, G. Hatakoshi(1.Research and Development Center, Toshiba Corporation)
[D-2-3]637nm cw Operation of Low Threshold Current AlGaInP Strained Single Quantum Well Laser Diodes
T. Katsuyama, I. Yoshida, J. Shinkai, J. Hashimoto, H. Hayashi(1.Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.)
[D-2-4]630nm Wavelength GaInP/AlInP Multi-Quantum Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GSMBE)
Akihiko KIKUCHI, Yawara KANEKO, Katsumi KISHINO(1.Dept. of Electrical and Electronics Engineering, Sophia University)
[D-2-5]Optical Bistable Devices by Charge-Induced Self-Feedback: Switching Time and Spatial Resolution
George Hayashi, Yoshifumi Yamaoka, Syuji Kodama, Masamichi Yamanishi, Yong Lee, Ikuo Suemune(1.Department of Physical Electronics, Hiroshima University)
[A-3-1]In-Situ Observation of Electromigration in Cu Film with Scanning μ-RHEED Microscope
Kazuya Masu, Yohei Hiura, Kazuo Tsubouchi, Tadahiro Ohmi, Nobuo Mikoshiba(1.Research Institute of Electrical Communication, Tohoku University, 2.Department of Electronics, Faculty of Engineering, Tohoku University)
[A-3-2]Sputtering of Aluminum Film Using Microwave Plasma with High Magnetic Field
S. Takehiro, N. Yamanaka, A. Narai, H. Shindo, S. Shingubara, Y. Horiike(1.Department of Electrical Engineering, Hiroshima University)
[A-3-3]Deposition of Polycrystalline Silicon by Rapid Thermal CVD and Its Application to Direct Contact to TiSi2
T. Yamaguchi, H. Itoh, T. Katayama, K. Tsukamoto, Y. Akasaka(1.LSI Laboratory, Mitsubishi Electric Corporation)
[A-3-4]A New Cleaning Method by Using Anhydrous HF/CH3OH Vapor System
A. Izumi, T. Matsuka, T. Takeuchi, A. Yamano(1.DAINIPPON SCREEN MFG. CO. LTD Development Department 2)
[A-4-1]Breakthrough in Semiconducting SiC towards Solid State Devices
H. Matsunami(1.Department of Electrical Engineering, Kyoto University)
[A-4-2]Selective Epitaxial Growth of Silicon and Germanium at Low Temperatures Using Ultraclean CVD Processing
Junichi MUROTA, Manabu KATO, Nobuo MIKOSHIBA, Shoichi ONO(1.Research Institute of Electrical Communication, Tohoku University)
[A-4-3]Interaction of Pd with Strained Layers of Si1-xGex Epitaxially Grown on Si(100)
A. Buxbaum, M. Eizenberg, A. Raizman, F. Schaffler(1.Dept. of Materials Engineering and Solid State Institute, Technion, 2.Soreq Nuclear Research Center, 3.Daimler - Benz AG, Forschungsinstitut Ulm)
[A-4-4]Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition
Masao SAKURABA, Junichi MUROTA, Nobuo MIKOSHIBA, Shoichi ONO(1.Research Institute of Electrical Communication, Tohoku University)
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