1991 International Conference on Solid State Devices and Materials
Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
1991 International Conference on Solid State Devices and Materials
Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
[A-2-1]Limits on Gate Insulator Thickness for MISFET Operation in Pure-Oxide and Nitrided-Oxide Gate Cases
T. Morimoto, H. S. Momose, M. Tsuchiaki, Y. Ozawa, K. Yamabe, H. Iwai(1.ULSI Research Center, Toshiba Corporation)
