[A-2-5]Strain Evaluation at the Si/SiO2 Interface Using ER Method
Pornchai YONGWATTANASOONTORN, Hitoshi KUBO, Masato MORIFUJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI Keitaro IMAI(1.Department of Electronic Engineering, Osaka University, 2.ULSI Research center, Toshiba Corporation)
