1991 International Conference on Solid State Devices and Materials
Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
1991 International Conference on Solid State Devices and Materials
Aug 27 - Aug 29, 1991Pacifico Yokohama, Yokohama, Japan
[B-1-4]Rapid Vapor-Phase Direct Doping; Ultra-Shallow Junction Formation Method for High-Speed Bipolar and Highly-Integrated DRAM LSIs
Yukihiro Kiyota, Takahiro Onai, Tohru Nakamura, Taroh Inada, Atsushi Kuranouchi, Yasuaki Hirano(1.Central Research Laboratory, Hitachi, Ltd, 2.College of Engineering, Hosei University)
