1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
Back
International Conference on Solid State Devices and Materials
1992 International Conference on Solid State Devices and Materials

1992 International Conference on Solid State Devices and Materials

Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan

[A-1-2]Low-Temperature (625℃) Silicon Epitaxial Growth on Silicon Substrates Heated-Up in SiH4 Atmosphere

K. Kobayashi, K. Fukumoto, T. Katayama, T. Higaki, H. Abe(1.LSI Laboratory, Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1992.A-1-2
Download PDFDownload PDF
Back