[A-0-1]One Hundred Years of Semiconductor-Device Developments (1874-1974)
S. M. Sze(1.Institute of Electronics National Chiao Tung University)
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
You can search for presentations in this event.
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1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
You can search for presentations in this event.
SearchSearch Results(263)
[A-0-2]A Perspective on Next Generation Silicon Devices
Takuo SUGANO(1.Department of Electrical and Electronic Engineering, Toyo University &, 2.Institute of Physical and Chemical Research)
[A-0-3]Optoelectronic Device and Material Technologies for Photo-Electronic Integrated Systems
Izuo Hayashi(1.Optoelectronics Technology Research Laboratory)
[A-1-1]A New Horizon of Plasma Enhanced CVD for Future Electron Devices
M. Hirose, H. Shin, S. Miyazaki(1.Department of Electrical Engineering, Hiroshima University)
[A-1-2]Low-Temperature (625℃) Silicon Epitaxial Growth on Silicon Substrates Heated-Up in SiH4 Atmosphere
K. Kobayashi, K. Fukumoto, T. Katayama, T. Higaki, H. Abe(1.LSI Laboratory, Mitsubishi Electric Corp.)
[A-1-3]Silicon Epitaxial Growth by a Fast Wafer Rotating Reactor Using Silane Gas
Yuusuke SATO, Tamami TAMURA, Toshimitsu OHMINE(1.Toshiba R&D Center, Toshiba Corporation, 2.Toshiba Corporation Fuchu Works)
[A-1-4]Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure
H. Ishiwara, H. Wakabayashi, K. Miyazaki, K. Fukao, A. Sawaoka(1.Precision and Intelligence Laboratory, Tokyo Institute of Technology, 2.Canon Inc., R/D, 3.Kanagawa works Hitachi Ltd., 4.Engineering Materials Laboratory, Tokyo Institute of Technology)
[A-1-5]Control of Interstitial Density in the Preamorphized Si by Carbon Implantation
Satoshi Nishikawa, Tetsuo Yamaji(1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)
[A-2-1]Control of Si Solid-Phase Nucleation by Surface Steps for High Performance Thin Film Transistors
Tanemasa Asano, Kenji Makihira(1.Center for Microelectronic Systems, Kyushu Institute of Technology)
[A-2-2]Solid-Phase Nucleation Control of Amorphous Si by Step-Structure of Substrate Surface and Local P-Doping
M. Moniwa, K. Kusukawa, M. Ohkura, E. Takeda(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-3]Oxygen Precipitation Control by Hydrogen and Preannealing at 425℃ in Czochralski Silicon Crystals
Akito Hara, Masaki Aoki, Tetsuo Fukuda, Akira Ohsawa(1.Fujitsu Laboratories Ltd.)
[A-2-4]Dislocation Engineering for Silicon Devices
J. S. Custer, J. R. Liefting, R. J. Schreutelkamp, R. C. M. Wijburg, H. Wallinga, F. W. Saris(1.FOM Institute for Atomic and Molecular Physics, 2.University of Twente, MESA Research Institute, 3.IMEC vzw)
[A-2-5]Molecular Scale Resist Simulation and Measurement for Pattern Fluctuation Analysis
Edward W. SCHECKLER, Shoji SHUKURI, Eiji TAKEDA(1.Hitachi Central Research Laboratory, Hitachi, Ltd.)
[A-2-6]Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma Chamber
Hiroshi Nishimura, Mikiho Kiuchi, Seitaro Matsuo(1.NTT LSI Laboratories)
[B-1-1]Low-Temperature CVD of Amorphous-Silicon and Silicon-Nitride --A New Trend of TFT Technology--
Masakiyo Matsumura, Osamu Sugiura(1.Tokyo Institute of Technology)
[B-1-2]High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
Kazuhiro Shimizu, Masayuki Higashimoto, Kyoutarou Nakamura, Osamu Sugiura, Masakiyo Matsumura(1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Fujitsu Corp.)
[B-1-3]A Simple Polysilicon Thin Film Transistor Structure for Achieving High On/Off Current Ratio Independent of Gate Bias
J. Kanicki, M. K. Hatalis(1.IBM Research Division, Thomas J. Watson Research Center, 2.Department of Electrical Engineering and Computer Science Lehigh University)
[B-1-4]A Fabrication of Homogenious Poly-Si TFT's Using Excimer Laser Annealing
I. Asai, N. Kato, M. Fuse, T. Hamano(1.Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Ltd.)
[B-2-1]Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor
Muneaki Yamaguchi, Yoshiyuki Kaneko, Ken Tsutsui(1.Central Research Laboratory, Hitachi, Ltd.)
[B-2-2]New Drain Conductance Method to Evaluate Impact Ionization Phenomenon in SOI MOSFET
Hiroyuki KURINO, Takeshi HASHIMOTO, Kiyomi HATA, Hiroyuki KIBA, Yasuo YAMAGUCHI, Tadashi NISHIMURA, Mitumasa KOYANAGI(1.Research Center for Integrated Systems, Hiroshima University, 2.LSI Laboratory, Mitsubishi Electric Corporation)
[B-2-3]Energy Transport Simulation with Quasi Three-Dimensional Temperature Analysis for SOI-MOSFET
Hiroyuki KIBA, Hiroyuki KURINO, Takeshi HASHIMOTO, Hiroki MORI, Ken YAMAGUCHI, Mitumasa KOYANAGI(1.Research Center for Integrated Systems, Hiroshima University, 2.Central Research Laboratory, Hitachi Ltd.)
[B-2-4]Ultrathin Oxide/Nitride/Oxide/Nitride Multilayer Films for Mbit DRAM Capacitors
S. Ohnishi, H. Watanabe, S. Adachi, N. Aoto, T. Kikkawa(1.Microelectronics Research Laboratories NEC Corporation)
[B-2-5]Phosphorus-Implanted Polysilicon Emitters with High Emitter Efficiency
A. Pruijmboom, W. T. A. van den Einden, D. B. M. Klaassen, J. W. Slotboom, G. Streutker, A. E. M. de Veirman, P. C. Zalm(1.Philips Research Laboratories)
[B-2-6]Local Zener Phenomenon--A Mechanism of p-n Junction Leakage Current--
Kiyonori Ohyu, Atsushi Hiraiwa(1.Central Research Laboratory, Hitachi Ltd.)
[C-1-1]Surface Process in Migration--Enhanced Epitaxy
Yoshiji Horikoshi(1.NTT Basic Research Laboratories)
[C-1-2]Electrical Characterization and Analysis of Lateral p-n Interfaces Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy
M. Inai, T. Yamamoto, M. Fujii, D. Lovell, A. Shinoda, K. Fujita, T. Takebe, K. Kobayashi(1.ATR Optical and Radio Communications Research Laboratories)
[C-1-3]Step Ordering during Fractional-Layer Superlattice Growth on GaAs(001) Vicinal Surfaces by Metalorganic Chemical Vapor Deposition
H. Saito, K. Uwai, Y. Tokura(1.NTT Basic Research Laboratories)
[C-1-4]In Situ Interface Control of Pseudomorphic InAs/InP SQWs Growth by Surface Photo-Absorption
Yasuyuki KOBAYASHI, Naoki KOBAYASHI(1.NTT Basic Research Laboratories)
[C-1-5]Super-High Efficiency Solar Cells: Present and Future
John C. C. Fan(1.Kopin Corporation)
[D-1-1]Quarter-Micron Interconnection Technologies for 256M DRAMs
Takamaro Kikkawa(1.Microelectronics Research Laboratories, NEC Corporation)
[D-1-2]Study of a Veil Structure and a Two-Step Corrosion Suppression Process in Al-Si-Cu Etching
Kazuhito Sakuma, Shoji Yagi, Kazuo Imai(1.NTT LSI Laboratories)
[D-1-3]Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field
N. Morimoto, S. Takehiro, Y. Matsui, I. Utsunomiya, H. Shindo, S. Shingubara, Y. Horiike(1.Dept. of Electrical Engineering, Hiroshima University, 2.Faculty of engineering, Fukuyama University)
[D-1-4]The Improvement of CVD-WSix Process by Preheating Method
Takeyasu Saito, Yoshiaki Yuyama, Yasuyuki Egashira, Yukihiro Shimogaki, Katsuro Sugawara, Hiroshi Komiyama(1.Department of Chemical Engineering, The University of Tokyo)
[D-1-5]Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
H. Kotaki, K. Mitsuhashi, J. Takagi, Y. Akagi, M. Koba(1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)
[D-1-6]The Suppression of Precipitation in Boro-Phospho-Silicate-Glass Films by Surface Control by Silylation (SCS) Process
Kousaku Yano, Yuka Terai, Sin-ichi Imai, Tetsuya Ueda, Satoshi Ueda, Masayuki Endoh, Noboru Nomura(1.Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)
[PA1-1]The Initial Stages of the Thermal Oxidation of Si(001) 2×1 Surface Studied by Scanning Tunneling Microscopy
Masaharu UDAGAWA, Masaaki NIWA, Isao SUMITA(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 2.Matsushita Research Institute Tokyo, Inc.)
[PA1-2]Initial Stage of SiO2/Si Interface Formation on Si(111) Surface
Yoshinari TAMURA, Kazuaki OHISHI, Hiroshi NOHIRA, Takeo HATTORI(1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)
[PA1-3]In-situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method in Vacuum Chamber
M. NISHIDA, Y. MATSUI, M. OKUYAMA, Y. HAMAKAWA(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)
[PA1-4]Nanometer Resolution Measurement of Dielectric Breakdown of Silicon Dioxide Films with AFM/STM
Yoshinobu FUKANO, Yasuhiro SUGAWARA, Seizo MORITA, Yoshiki YAMANISHI, Takahiko OASA(1.Department of Physics, Faculty of Science, Hiroshima University, 2.Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd.)
[PA1-5]Preoxide-Controlled Oxidation for Very Thin Gate Oxide
K. Makihara, A. Teramoto, K. Nakamura M. Morita, T. Ohmi(1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University)
[PA1-6]Critical Parameters for Obtaining Low Particle Densities in an HF-Last Process
J. L. Alay, S. Verhaverbeke, W. Vandervorst, M. Heyns(1.IMECvzw, 2.LCMM, Facultat de Fisica, Universitat de Barcelona)
[PA1-7]Measurement of Physical Thickness of Native Oxide Using Accurately-Calibrated Atomic Force Microscope
Shintaro Aoyama, Yoshinori Nakagawa, Tadahiro Ohmi(1.Department of Electronics, Tohoku University)
[PA1-8]Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy and Scanning Tunneling Microscopy
Tomohiro KONISHI, Katsuhiro UESUGI, Seiji KAWANO, Takafumi YAO, Hisayoshi OHSHIMA, Hiroyasu ITO, Tadashi HATTORI(1.Department of Electrical Engineering, Hiroshima University, 2.Research Laboratories Nippondenso Co., Ltd.)
[PA1-9]Silane Thermal Decomposition Characteristics on Various Si Surface
Tsuyoshi Watanabe, Masakazu Nakamura, Atsushi Ohki, Koji Kawada Shinji Miyoshi, Shinji Takahashi, Michael S. K Chen, Tadahiro Ohmi(1.Department of Electronics, Tohoku University)
[PA1-L10]AFM/STM Investigation of pn Junctions Formed by Ion Implantation
Yasuhiro SUGAWARA, Yoshinobu FUKANO, Seizo MORITA Akihiko NAKANO, Tohru IDA(1.Department of Physics, Faculty of Science, Hiroshima University, 2.VLSI Development Laboratories, IC Group, Sharp Corporation)
[PA2-1]Dynamic Shielding of Substrate Bias Effects on Electrical Characteristics of High Voltage IGBTs on SOI
Akio Nakagawa, Tomoko Matsudai, Ichiro Omura(1.Toshiba Corporation)
[PA2-2]A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric
C. C. -H. Hsu, A. Acovic, L. Dori, B. Wu, T. Lii, D. Quinlan, D. DiMaria, Y. Taur, M. Wordeman, T. Ning(1.IBM Research Division, Thomas J. Watson Research Center, 2.Department of Electrical Engineering, National Tsing-Hua Univ.)
[PA2-3]A Simple Model for the Switching Behavior of a SONOS EEPROM Device
J. K. Lin, C. Y. Chang, T. S. Ho, H. S. Huang(1.Institute of Electronics, National Chiao Tung University, 2.Memory Products Division, United Microelectronics Corporation)
[PA2-4]Nitrogen Dangling Bonds in Hydrogenated Amorphous Silicon Nitride Thin Films
J. Kanicki, W. L. Warren, E. H. Poindexter(1.IBM Research Division, Thomas J. Watson Research Center, 2.Sandia National Laboratories, 3.US Army ET&DL)
[PA2-6]Interface State Generation and Annihilation in Thin Film p-Channel MOSFETs
Quazi Deen Mohd Khosru, Naoki Yasuda, Kenji Taniguchi, Chihiro Hamaguchi(1.Department of Electronic Engineering, Osaka University, 2.Toshiba Corporation, ULSI Research Center)
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