1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
[A-1-3]Silicon Epitaxial Growth by a Fast Wafer Rotating Reactor Using Silane Gas
Yuusuke SATO, Tamami TAMURA, Toshimitsu OHMINE(1.Toshiba R&D Center, Toshiba Corporation, 2.Toshiba Corporation Fuchu Works)
