1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
[B-1-2]High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
Kazuhiro Shimizu, Masayuki Higashimoto, Kyoutarou Nakamura, Osamu Sugiura, Masakiyo Matsumura(1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Fujitsu Corp.)
