1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
[B-2-2]New Drain Conductance Method to Evaluate Impact Ionization Phenomenon in SOI MOSFET
Hiroyuki KURINO, Takeshi HASHIMOTO, Kiyomi HATA, Hiroyuki KIBA, Yasuo YAMAGUCHI, Tadashi NISHIMURA, Mitumasa KOYANAGI(1.Research Center for Integrated Systems, Hiroshima University, 2.LSI Laboratory, Mitsubishi Electric Corporation)
