1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
[D-1-3]Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field
N. Morimoto, S. Takehiro, Y. Matsui, I. Utsunomiya, H. Shindo, S. Shingubara, Y. Horiike(1.Dept. of Electrical Engineering, Hiroshima University, 2.Faculty of engineering, Fukuyama University)
