1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
[D-1-5]Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact
H. Kotaki, K. Mitsuhashi, J. Takagi, Y. Akagi, M. Koba(1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)
