1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
1992 International Conference on Solid State Devices and Materials
Aug 26 - Aug 28, 1992Tsukuba Center Building, Tsukuba, Japan
[PA1-1]The Initial Stages of the Thermal Oxidation of Si(001) 2×1 Surface Studied by Scanning Tunneling Microscopy
Masaharu UDAGAWA, Masaaki NIWA, Isao SUMITA(1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 2.Matsushita Research Institute Tokyo, Inc.)
