1994 International Conference on Solid State Devices and Materials
Aug 23 - Aug 26, 1994Pacifico Yokohama, Yokohama, Japan
1994 International Conference on Solid State Devices and Materials
Aug 23 - Aug 26, 1994Pacifico Yokohama, Yokohama, Japan
[S-I-1-2]Two Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
Akihiko KOKUCHI, Hiroyuki HOSHI, Katsumi KISHINO(1.Dept. of Electrical & Electronics Engineering, Sophia University)
