[S-I-1-1]Growth Dynamics of III-V Semiconductor Films
Bruce A Joyce(1.Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine)
1994 International Conference on Solid State Devices and Materials
Aug 23 - Aug 26, 1994Pacifico Yokohama, Yokohama, Japan
You can search for presentations in this event.
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1994 International Conference on Solid State Devices and Materials
Aug 23 - Aug 26, 1994Pacifico Yokohama, Yokohama, Japan
You can search for presentations in this event.
SearchSearch Results(340)
[S-I-1-2]Two Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
Akihiko KOKUCHI, Hiroyuki HOSHI, Katsumi KISHINO(1.Dept. of Electrical & Electronics Engineering, Sophia University)
[S-I-1-3]Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals
Michio SATO(1.NTT Basic Research Laboratories)
[S-I-1-4]Anomalous Step Bunching of a Strained InGaAs Epitaxial Layer Grown on an Off-Angled GaAs Substrate
K. Fukagai, S. Ishikawa(1.Opto-Electronics Research Laboratories, NEC Corporation)
[S-I-1-5]Surface Second-Harmonic Generation (SHG) Study of Epitaxial Growth of GaAs
Chiakshi Yamada, Takahiro Kimura(1.Optoelectronics Technology Research Laboratory)
[S-I-2-1]New Challenges for Delta-Like Confinement of Impurities in GaAs
Klaus H. Ploog, Lutz Daweritz(1.Paul-Drude-Institut fur Festkorperelektronik)
[S-I-2-2]Control of As Precipitation in Low Temperature GaAs by Electronic and Isoelectronic Delta Doping
T. M. Cheng, C. Y. Chang, J. H. Huang(1.Institute of Electronics, National Chiao-Tung University)
[S-I-2-3]Stress Relaxation of GaAs on Si by Laser Pulse Irradiation
Hideo UCHIDA, Tetsuo SOGA, Hironobu NISHIKAWA, Takashi JIMBO, Masayoshi UMENO(1.Department of Electrical and Computer Engineering, Instrument and Analysis Center, Department of Physics, Research Center for Micro-Structure Devices, Nagoya Institute of Technology)
[S-I-2-4]Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer
S. Saito, Y. Nishikawa, J. Rennie, M. Onomura, P. J. Parbrook, K. Nitta, M. Ishikawa, G. Hatakoshi(1.Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation)
[S-I-2-5]Anti-Phase Direct Bonding of InP and GaAs and Its Application to Semiconductor Lasers
Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, M. Kondow(1.Central Research Laboratory, Hitachi, Ltd., 2.Fiberoptics Division, Hitachi, Ltd.)
[S-I-3-1]Single Atom Manipulation and Its Real-Time Detection by STM
Masakazu AONO(1.Surface and Interface Laboratory, Institute of Physical and Chemical Research (RIKEN), 2.Aono Atomcraft Project, Research Development Corporation of Japan (JRDC))
[S-I-3-2]Direct Observation of a Scanning Tunneling Microscope Tip Apex Using a Transmission Electron Microscope
M. I. Lutwyche, Y. Wada(1.Advanced Research Laboratory, Hitachi, Ltd.)
[S-I-3-3]Observation of Positively Charged Trap Site in Silicon Oxide Layer with an Atomic Force Microscope
Yoshinobu FUKANO, Takahiro OKUSAKO, Takayuki UCHIHASHI, Yasuhiro SUGAWARA, Yoshiki YAMANISHI, Takahiko OASA, Seizo MORITA(1.Department of Physics, Faculty of Science, Hiroshima University, 2.Advanced Technology Research Lab., Sumitomo Metal Industries, Ltd.)
[S-I-3-4]Evaluation of Thin SiO2 Layers by Beam Assisted Scanning Tunneling Microscope
Seiji Heike, Yasuo Wada, Seiichi Kondo, Mark Lutwyche, Ken Murayama, Hiroshi Kuroda(1.Advanced Research Laboratory, Hitachi, Ltd., 2.Technical Research Laboratory, Research and Development Division, Hitachi Construction Machinery Co., Ltd.)
[S-I-4-1]AFM-Based Fabrication of Semiconductor Nanostructures
E. S. Snow, P. M. Campbell, P. J. McMarr(1.Naval Research Laboratory)
[S-I-4-2]First Application of STM Nano-Meter Size Oxidation Process to Planar-Type MIM Diode
KAZUHIKO MATSUMOTO, Shu Takahashi, Masami Ishii, Masakatsu Hoshi, Akira Kurokawa, Shingo Ichimura, Atsushi Ando(1.Electrotechnical Laboratory MITI, 2.Nissan Motor Co., LTD.)
[S-I-4-3]AFM Observation of Self-Assembled Monolayer Films on GaAs(110)
Hirotaka OHNO, Makoto MOTOMATSU, Wataru MIZUTANI, Hiroshi TOKUMOTO(1.Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 2.Joint Research Center for Atom Technology (JRCAT), National Institute for Advanced Interdisciplinary Research (NAIR))
[S-I-4-4]2×6 Surface Reconstruction of Sulfur-Terminated GaAs (001) Observed by Scanning Tunneling Microscopy
Shiro Tsukamoto, Nobuyuki Koguchi(1.National Research Institute for Metals)
[S-I-5-1]Spectroscopy of Quantum Dots and Antidots
Detlef Heitmann(1.Universitat Hamburg, Institut fur Angewandte Physik)
[S-I-5-2]Doped Nanocrystals of Semiconductors--A New Class of Luminescent Materials
R. N. Bhargava(1.Nanocrystals Technology)
[S-I-5-3]InGaAs/GaAs Quantum Dots (～15nm) Grown by MOCVD
M. Nishioka, J. Oshinowo, S. Ishida, Y. Arakawa(1.Institute of Industrial Science, University of Tokyo)
[S-I-5-4]Blue-Shifted Photoluminescence from GaAs/AlGaAs Quantum-Well Box Fabricated by Low-Damage Wet Chemical Etching
K. Momma, N. Ogasawara, S. Fukatsu, Y. Shiraki(1.Dept. of Electronics Eng. Univ. of Electro-Commun, 2.RCAST, The University of Tokyo)
[S-I-6-1]InGaAs Strained Quantum Wire Structures: Optical Properties and Laser Applications
J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg(1.Inst. f. Festkorperphysik, Techn. Uni., 2.Inst. f. Experiment. Physik, Uni., 3.Swiss Federal Inst. of Techn., 4.Bellcore, Red Bank)
[S-I-6-2]Cathodoluminescence of GaAs/AlAs Quantum Wells Grown on Stripe and Square Patterns by Molecular Beam Epitaxy
Isamu MATSUYAMA, Maximo LOPEZ, Nobuyuki TANAKA, Tomonori ISHIKAWA(1.Optoelectronics Technology Research Laboratory (OTL))
[S-I-6-3]Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
Koichi INOUE, Hu Kun HUANG, Misaichi TAKEUCHI, Kenta KIMURA, Hisao NAKASHIMA, Masaaki IWANE, Osamu MATSUDA, Kazuo MURASE(1.The Institute of Scientific and Industrial Research, Osaka University, 2.Department of Physics, Faculty of Science, Osaka University)
[S-I-6-4]Control of Current in 2DEG Channel by Oxide Wire Formed with AFM
M. Ishii, K. Matsumoto(1.Electrotechnical Laboratory, MITI)
[S-I-6-5]Local Incorporation of Lateral Piezoelectric Fields in Strained III/V Semiconductor Nanostructures
Klaus H. Ploog, Matthias Ilg(1.Paul-Drude-Institut fur Festkorperelektronik)
[S-I-7-1]InGaN/AlGaN Double-Heterostructure Light-Emitting Diodes
Shuji Nakamura(1.Department of Research and Development, Nichia Chemical Industries, Ltd.)
[S-I-7-2]650 nm-AlGaInP Visible Light-LD with Dry-Etched Mesa Stripe
T. Yoshikawa, Y. Sugimoto, H. Hotta, K. Kobayashi, F. Miyasaka, K. Asakawa(1.Opto-Electronics Res. Labs., NEC Corp.)
[S-I-7-3]Picosecond Optical Bistability of ZnS-ZnTe/GaAs MQWs on Reflection at Room Temperature
D. Z. Shen, X. W. Fan, B. J. Yang(1.Laboratory of Excited State Processes, Changchun Institute of Physics, Academia Sinica)
[S-I-7-4]Single Chip Integration of LED, Waveguide and Micromirrors
Takahiko NAGATA, Tohru NAMBA, Kouji MIYAKE, Takeshi DOI, Takahiro MIYAMOTO, Yasuhide KURODA, Shin YOKOYAMA, Seiichi MIYAZAKI, Mitsumasa KOYANAGI, Masataka HIROSE(1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)
[S-I-8-1]Electron-Beam Induced Etching as a Key Process in Through-Vacuum Fabrication of GaAs-AlGaAs Nanoheterostructures
Yoshifumi KATAYAMA, Tomonori ISHIKAWA, Nobuyuki TANAKA, Maximo LOPEZ, Isamu MATSUYAMA, Yuichi IDE, Masamichi YAMADA(1.Opotelectronics Technology Research Laboratory (OTL))
[S-I-8-2]EB Patterning Mechanism of GaAs Oxide Mask Layers Used in In-Situ EB Lithography
N. Tanaka, M. Lopez, I. Matsuyama, T. Ishikawa(1.Optoelectronics Technology Research Laboratory (OTL))
[S-I-8-3]Direct Patterning of the Current Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
M. Inamori, H. Sakai, T. Tanaka, H. Amano, I. Akasaki(1.Department of Electrical and Electronic Engineering, Meijo University, 2.Devices and Materials Department, Pioneer Electronic Corporation)
[S-I-8-4]Natural Superlattice Disordering in GaInP/AlGaInP by Ultra-Low Energy Ion Exposure
J. HOMMEL, B. Hoehing, M. Kessler, C. Geng, F. Scholz, H. Schweizer(1.Universitaet Stuttgart, 4. Physikalisches Institut)
[S-I-8-5]Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Si Ion-Implantation and Low-Temperature Annealing
T. Yokogawa, J. Merz, H. Luo, J. Furdyna, M. Kuttler, D. Bimberg, S. Lau(1.Dept. of Electrical and Computer Engineering, University of California, 2.Univ. of Notre Dame, 3.Technische Universitat Berlin, 4.Univ. of California)
[S-I-9-1]Photoreflectance and Photoluminescence Study of Direct-and Indirect-Gap Band Lineups of GaAsP/GaP Strained Quantum Wells
H. Yaguchi, S. Hashimoto, T. Sugita, Y. Hara, K. Onabe, Y. Shiraki, R. Ito(1.Department of Applied Physics, The University of Tokyo, 2.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)
[S-I-9-2]Optical Study of Exciton Oscillator Strength in Semiconductor Quantum Wells
Baoping ZHANG, Satoru S. KANO, Ryoichi ITO, Yasuhiro SHIRAKI(1.RCAST, The University of Tokyo, 2.IBM Japan Ltd., 3.Department of Applied Physics, The University of Tokyo)
[S-I-9-3]Excitation and Relaxation of Yb 4f-Shell in InP Host--Energy Compensation by a Multi-Phonon Process
Akihito Taguchi, Kenichiro Takahei(1.NTT Basic Research Laboratories)
[S-I-9-4]Quantitative Determination of the Order Parameter in Ordered III-V Semiconductors by TEM and TED
M. H. Bode, Sarah Kurtz, D. J. Arent, K. Bertness, J. Olson(1.National Renewable Energy Laboratory)
[S-I-9-5]DLTS Study of Deep Levels in Si-Doped InxAl1-xAs Layers Grown by Molecular Beam Epitaxy
H. Tomozawa, A. Malinin, T. Hashizume, H. Hasegawa(1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)
[S-I-10-1]Metallic and Dielectric Photonic Crystals for Photon Control
Eli Yablonovitch, Mike Sickmiller(1.UCLA Electrical Engineering Dept.)
[S-I-10-2]GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
Satoshi Mitsugi, Junichi Kato, Fumio Koyama, Akihiro Matsutani Toshikazu Mukaihara, Kenichi Iga(1.Tokyo Institute of Technology, Precision & Intelligence Lab.)
[S-I-10-3]Two-Dimensional Bi-Periodic Grating Coupled One- and Two-Color Quantum Well Infrared Photodetectors
K. L. Tsai, C. P. Lee, J. S. Tsang, H. R. Chen, D. C. Liu(1.Department of Electronics Engineering and Institute of Electronics National Chiao Tung University)
[S-I-10-4]Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor
Victor RYZHII, Maxim ERSHOV(1.Department of Computer Hardware, The University of Aizu)
[S-I-11-1]Particle Statistics and Quantum Dynamics in a Semiconductor Quantum-Well Microcavity
J. Jacobson, H. Cao, G. Bjork, S. Pau, Y. Yamamoto(1.ERATO Quantum Fluctuation Project, Edward L. Ginzton Laboratory, Stanford University, 2.NTT Basic Research Laboratories)
[S-I-11-2]Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled DFB Laser
Tomohiro Otani, Tsurugi K. Sudoh, Yoshiaki Nakano, Kunio Tada, Hiroki Ishikuro(1.Department of Electronic Engineering, University of Tokyo)
[S-I-11-3]Formation of High Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325nm Laser Holographic Exposure
Kazuya Okamoto, Yoshiaki Nakano, Kunio Tada(1.Central Research Laboratory, Nikon Corporation, 2.Department of Electronic Engineering, University of Tokyo)
[S-I-11-4]Ultrahigh-Reflectivity (99.8%) InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm VCSELs
K. Shinoda, K. Hiramoto, K. Uomi, T. Tsuchiya(1.Central Research Laboratory, Hitachi Ltd.)
[S-I-11-5]Photonic Devices Based on Crystalline Organic Semiconductors for Optoelectronic Integrated Circuits
W. Kowalsky, C. Rompf, D. Ammermann(1.Optoelectronics Department, University of Ulm)
340 results ( 1 - 50 )
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