1994 International Conference on Solid State Devices and Materials
Aug 23 - Aug 26, 1994Pacifico Yokohama, Yokohama, Japan
1994 International Conference on Solid State Devices and Materials
Aug 23 - Aug 26, 1994Pacifico Yokohama, Yokohama, Japan
[S-I-2-4]Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buffer Layer
S. Saito, Y. Nishikawa, J. Rennie, M. Onomura, P. J. Parbrook, K. Nitta, M. Ishikawa, G. Hatakoshi(1.Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation)
