1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[B-1-6]In-Situ Doped CMOS Polysilicon Thin Film Transistors
Byung-Hyuk Min, Cheol-Min Park, Byung-Seong Bae, Min-Koo Han(1.Dept. of Electrical Engineering, Seoul National University, 2.Special Marketing Team/Poly PJT, Samsung Electronics Co.)
