[A-0-1]Four-Terminal Device Electronics for Intelligent Silicon Integrated Systems
Tadahiro OHMI, Tadashi SHIBATA(1.Department of Electronic Engineering, Tohoku University)
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
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1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
You can search for presentations in this event.
SearchSearch Results(375)
[A-0-2]The Control of Optical Beams in Imaging and High Data Rate Fiber Communications
A. Yariv(1.California Inst.)
[A-0-3]300mm Implementation
Frank Robertson(1.SEMATECH)
[S-I-1-1]The Role of Thermodynamics in Determining the Short Range Order in Amorphous Insulating Films
F. W. SMITH(1.Physics Department, City College of the City University of New York)
[S-I-1-2]In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
Hiroki OGAWA, Kenji ISHIKAWA, Masaru AOKI, Shuzo FUJIMURA, Nobuo UENO, Yasuhiro HORIIKE, Yoshiya HARADA(1.Process Development Div., C850, Fujitsu Ltd., 2.Department of Chemistry, College of Arts and Science, The Univ. of Tokyo, 3.Department of Material Science, Faculty of Engineering, Chiba Univ., 4.Department of Electrical Engineering, Toyo Univ.)
[S-I-1-3]Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Hiroshi IKEGAMI, Kenji OHMORI, Hiroya IKEDA, Hirotaka IWANO, Shigeaki ZAIMA, Yukio YASUDA(1.Department of Crystalline Materials Science, School of Engineering, Nagoya University)
[S-I-1-4]Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases
Hikaru Kobayashi, Yoshiyuki Yamashita, Kenji Namba, Yoshihiro Nakato, Yasushiro Nishioka(1.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University, 2.Tsukuba Research and Development Center, Texas Instruments Japan)
[S-I-1-5]Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
Junji KOGA, Shin-ichi TAKAGI, Akira TORIUMI(1.ULSI Research Laboratories, Toshiba Corporation)
[S-I-2-1]Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
Takeshi KANASHIMA, Masanori OKUYAMA, Yoshihiro HAMAKAWA(1.Department of Electrical Engineering, Faculty of Engineering Science Osaka University)
[S-I-2-2]The Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy
J. L. Alay, M. Fukuda, K. Nakagawa, S. Yokoyama, M. Hirose(1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)
[S-I-2-3]A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams
Makoto AKIZUKI, Jiro MATSUO, Satoru OGASAWARA, Mitsuaki HARADA, Atsumasa DOI, Isao YAMADA(1.Microelectronics Research Center, SANYO Electric Co., Ltd., 2.Ion Beam Engineering Experimental Laboratory, Kyoto University)
[S-I-2-4]Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices
Gerald LUCOVSKY, David R. LEE, Sunil V. HATTANGADY, Hiro NIIMI, Chris PARKER, John R. HAUSER(1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)
[S-I-2-5]Clarification of Nitridation Effect on Oxidation Methods
T. Kuroi, S. Shirahata, Y. Okumura, S. Shimizu, A. Teramoto, M. Anma, M. Inuishi, T. Hirao(1.ULSI Laboratory, Mitsubishi Electric Corporation)
[B-1-1]Semiconductor Silicon Carbide for Power Electronic Application
Hiroyuki MATSUNAMI, Akira ITOH(1.Department of Electronic Science and Engineering, Kyoto University)
[B-1-2]Super-β Bipolar Transistor Equivalent in CMOS Technology
Gyudong Kim, Min-Kyu Kim, Wonchan Kim, Abdesselam Bouzerdoum(1.Department of Electronics Engineering, Seoul National University)
[B-1-3]CVD-EPI MOS Transistors with a 65 nm Vertical Channel
F. Hofmann, W. H. Krautschneider, L. Risch, H. Schaefer(1.Siemens AG, Corporate Research and Development, ZFE T MEI)
[B-1-4]Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor
Eiji OBA, Ryouhei MIYAGAWA, Hisanori IHARA, Michio SASAKI, Hirofumi YAMASHITA, Hiroyuki TANGO, Okio YOSHIDA, Sohei MANABE(1.ULSI Research Laboratories, Research and Development Center, Toshiba Corporation)
[B-1-5]Polysilicon Thin Film Transistors with PN Junction Gate
Byung-Hyuk Min, Cheol-Min Park, Min-Koo Han(1.Dept. of Electrical Engineering, Seoul National University)
[B-1-6]In-Situ Doped CMOS Polysilicon Thin Film Transistors
Byung-Hyuk Min, Cheol-Min Park, Byung-Seong Bae, Min-Koo Han(1.Dept. of Electrical Engineering, Seoul National University, 2.Special Marketing Team/Poly PJT, Samsung Electronics Co.)
[B-2-1]A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications
Masataka Takebuchi, Jun-ichiro Noda, Daisuke Tohyama, Shu Ueno, Kanji Osari, Kuniyoshi Yoshikawa(1.Toshiba Corp., 2.Toshiba Microelectronics Corp.)
[B-2-2]A Flash Memory Technology for Operating Voltage Reduction and Self-Convergence of the Over Erased Cells
S. Sato, T. Tanigami, K. Hakozaki, N. Shinmura, K. Iguchi, K. Sakiyama(1.VLSI Development Laboratories, IC Group, SHARP Corporation)
[B-2-3]Comparison of Over Erase Susceptibility and Cycling Reliability between Channel Erase and Bitline Erase in Flash EEPROM
Jen-Tai Hsu, Stuart Shumway(1.Memory Product Division, National Semiconductor Corporation)
[B-2-4]High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb
Naoki Miyamoto, Takayuki Kawahara, Syun-ichi Saeki, Yusuke Jyouno, Masataka Kato, Katsutaka Kimura(1.Hitachi Device Engineering, Co., Ltd., 2.Central Research Laboratory, Hitachi Ltd., 3.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)
[S-IV-1]Thin Film Challenges of the SIA National Technology Roadmap
D. B. Fraser(1.Intel)
[S-IV-2]Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features
Yoshiaki TAKEMURA, Jiro USHIO, Takuya MARUIZUMI, Ryotaro IRIE, Nobuyoshi KOBAYASHI(1.Central Research Laboratory, Hitachi, Ltd., 2.Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.)
[S-IV-3]Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
Yoshitaka Nakamura, Nobuyoshi Kobayashi, Digh Hisamoto, Kazunori Umeda, Ryo Nagai(1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)
[S-IV-4]W as a BIT Line Interconnection in COB Structured DRAM and Feasible Diffusion Barrier Layer
Jeong Soo Byun, Jun Ki Kim, Jin Won Park, Jae Jeong Kim(1.ULSI Laboratory of LG Semicon Co. Ltd.)
[S-IV-5]Formation of Metal/Silicon Contacts for ULSI and Induced Defects by Silicidation
Yukio YASUDA, Shigeaki ZAIMA(1.Department of Crystalline Materials Science, School of Engineering, Nagoya University)
[S-IV-6]Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
H. Kotaki, M. Nakano, S. Hayashida, T. Matsuoka, S. Kakimoto, A. Nakano, K. Uda, Y. Sato(1.Central Research Laboratories, Sharp Corporation, 2.Analysis Center, (IC) Group, Sharp Corporation)
[S-IV-7]Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
I. S. Park, M. Yoon, H. -D. Lee, C. S. Park, Y. J. Wee, G. H. Choi, K. Y. Oh, S. I. Lee, M. Y. Lee(1.Semiconductor R&D center, Samsung Electronics, Co. Ltd.)
[S-IV-8]In Situ Study of Electromigration in Submicron-Wide Layered Al-0.5%Cu Lines by Side-View TEM Observation
Hidekazu OKABAYASHI, Masao KOMATSU, Hirotaro MORI(1.Research and Development Group, NEC Corp., 2.Research Center for Ultra-High Voltage Electron Microscopy, Osaka University)
[S-IV-9]Copper Interconnects Fabricated by Dry Etching Process
Yasushi Igarashi, Tomomi Yamanobe, Toshio Ito(1.Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.)
[S-IV-10]Double-Level Cu Inlaid Interconnects with Simultaneously Filled Via-Plugs
G. Minamihaba, Y. Shimooka, H. Tamura, T. Iijima, T. Kawanoue, H. Hirabayashi, N. Sakurai, H. Ookawa, T. Obara, H. Egawa, T. Idaka, T. Kubota, T. Shimizu, M. Koyama, G. Ooshima, K. Suguro(1.ULSI Research Laboratories, Manufacturing Engineering Research Center, Semiconductor Division, TOSHIBA Corporation)
[D-1-1]Terahertz Quantum Transport in Semiconductor Superlattices and Quantum Wells
S. J. ALLEN, U. BHATTACHARYA, K. L. CAMPMAN, J. GALAN, A. C. GOSSARD, J. P. KAMINSKI, B. J. KEAY, K. D. MARANOWSKI, M. J. M. RODWELL, S. ZEUNER(1.Center for Free-electron Laser Studies, 2.Materials Department, 3.Department of Electrical and Computer Engineering, 4.Physics Department, Ohio State University)
[D-1-2]Nanometer-Scale Current-Voltage Spectra Measurement of Resonant Tunneling Diodes Using Scanning Force Microscopy
Masafumi TANIMOTO, Kiyoshi KANISAWA, Masanori SHINOHARA(1.NTT LSI Laboratories, 2.NTT Basic Research Laboratories)
[D-1-3]Deep Levels and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
S. Shiobara, T. Hashizume, H. Hasegawa(1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)
[D-1-4]The Electrical Properties of High Quality Stacked CdTe/Photo-Enhanced-Native-Oxide for HgCdTe Passivation
Y. K. Su, C. T. Lin, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen, J. J. Luo(1.Department of electrical Engineering, National Cheng Kung University, 2.Chung Shan Institute of Science and Technology)
[D-1-5]Efficient MIS Electric Field Effect on Diamond Thin Film Transistors
Yuzuru OTSUKA, Sei SUZUKI, Tetsuro MAKI, Ken SAKUTA, Takeshi KOBAYASHI(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)
[D-1-6]Fabrication and Characterization of a Phase Controlled SNS Quantum Electron Interferometer
V. T. Petrashov, V. N. Antonov, P. Delsing, T. Claeson(1.Institute of Microelectronics Technology, Russian Academy of Sciences, 2.Department of Physics, Chalmers University of Technology and University of Goteborg)
[D-2-1]Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
Takashi ASANO, Susumu NODA, Tomoki ABE, Akio SASAKI(1.Department of Electronic Science and Engineering, Kyoto University)
[D-2-2]Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
Pablo O. VACCARO, Makoto HOSODA, Kazuhisa FUJITA, Toshihide WATANABE(1.ATR Optical and Radio Communications Research Laboratories)
[D-2-3]Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate
T. M. Cheng, C. Y. Chang, G. R. Lin, F. Ganikhanov, C. L. Pan, J. H. Huang(1.Institute of Electronics, National Chiao-Tung University, 2.Institute of Electro-Optical Engineering, National Chiao-Tung University, 3.Materials of Science Center, National Tsing-Hua University)
[D-2-4]Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
Toshiki Makimoto, Naoki Kobayashi(1.NTT Basic Research Laboratories)
[D-2-5]Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
N. Ohtani, H. Mimura, M. Hosoda, K. Tominaga, T. Watanabe, K. Fujiwara(1.ART Optical and Radio Communications Research Laboratories, 2.Department of Electrical Engineering, Kyushu Institute of Technology)
[S-I-3-1]Defects in Amorphous Silicon-Nitrogen Alloy Films
Tatsuo SHIMIZU(1.Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University)
[S-I-3-2]Interface States in Top Gate Metal-Silicon Nitride-Silicon Structures
J. Kanicki S. Backert, N. Picard(1.Center for Display Technology and Manufacturing The University of Michigan, 2.Department of Solid State Physics Ecole Polytechnique)
[S-I-3-3]Oxynitride Pad LOCOS (ON-LOCOS) Isolation Technology for Gigabit DRAMs
Yasuhiro Sambonsugi, Tatsuya Yamazaki, Shoichiro Kawashima, Toshihiro Sugii(1.FUJITSU LABORATORIES LTD.)
[S-I-4-1]Simulations of Crack Propagation and Fracture in Silica and Silicon Nitride Films on Parallel Computers
Priya VASHISHTA, Aiichiro NAKANO, Rajiv K. KALIA(1.Concurrent Computing Laboratory for Materials Simulations Department of Physics and Astronomy, and Department of Computer Science Louisiana State University)
[S-I-4-2]Application of CVD SiO2 Single Layer Films to Inter-Poly Dielectrics of Flash Memories
T. Kobayashi, M. Ushiyama, N. Miyamoto, J. Yugami, H. Kume, K. Kimura(1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi Device Engineering Co.)
[S-I-4-3]Investigation of Interlayer Dielectric Material Influence on DRAM Retention Time
M. Ohishi, K. Matsui, K. Koyama(1.ULSI Device Development Laboratories, NEC Corporation)
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