1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[B-2-1]A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications
Masataka Takebuchi, Jun-ichiro Noda, Daisuke Tohyama, Shu Ueno, Kanji Osari, Kuniyoshi Yoshikawa(1.Toshiba Corp., 2.Toshiba Microelectronics Corp.)
