1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

Aug 21 - Aug 24, 1995International House, Osaka, Japan
International Conference on Solid State Devices and Materials
1995 International Conference on Solid State Devices and Materials

1995 International Conference on Solid State Devices and Materials

Aug 21 - Aug 24, 1995International House, Osaka, Japan

[B-2-4]High-Reliability Programming Method Suitable for Flash Memories of More Than 256 Mb

Naoki Miyamoto, Takayuki Kawahara, Syun-ichi Saeki, Yusuke Jyouno, Masataka Kato, Katsutaka Kimura(1.Hitachi Device Engineering, Co., Ltd., 2.Central Research Laboratory, Hitachi Ltd., 3.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1995.B-2-4