1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[D-1-3]Deep Levels and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
S. Shiobara, T. Hashizume, H. Hasegawa(1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)
