1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[D-2-5]Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
N. Ohtani, H. Mimura, M. Hosoda, K. Tominaga, T. Watanabe, K. Fujiwara(1.ART Optical and Radio Communications Research Laboratories, 2.Department of Electrical Engineering, Kyushu Institute of Technology)
