1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-I-2-1]Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
Takeshi KANASHIMA, Masanori OKUYAMA, Yoshihiro HAMAKAWA(1.Department of Electrical Engineering, Faculty of Engineering Science Osaka University)
