1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-I-2-2]The Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy
J. L. Alay, M. Fukuda, K. Nakagawa, S. Yokoyama, M. Hirose(1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)
