1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-I-2-4]Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices
Gerald LUCOVSKY, David R. LEE, Sunil V. HATTANGADY, Hiro NIIMI, Chris PARKER, John R. HAUSER(1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)
