1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-IV-2]Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features
Yoshiaki TAKEMURA, Jiro USHIO, Takuya MARUIZUMI, Ryotaro IRIE, Nobuyoshi KOBAYASHI(1.Central Research Laboratory, Hitachi, Ltd., 2.Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.)
