1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-IV-3]Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
Yoshitaka Nakamura, Nobuyoshi Kobayashi, Digh Hisamoto, Kazunori Umeda, Ryo Nagai(1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)
