1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-IV-6]Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
H. Kotaki, M. Nakano, S. Hayashida, T. Matsuoka, S. Kakimoto, A. Nakano, K. Uda, Y. Sato(1.Central Research Laboratories, Sharp Corporation, 2.Analysis Center, (IC) Group, Sharp Corporation)
