1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
1995 International Conference on Solid State Devices and Materials
Aug 21 - Aug 24, 1995International House, Osaka, Japan
[S-IV-7]Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
I. S. Park, M. Yoon, H. -D. Lee, C. S. Park, Y. J. Wee, G. H. Choi, K. Y. Oh, S. I. Lee, M. Y. Lee(1.Semiconductor R&D center, Samsung Electronics, Co. Ltd.)
