1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
[A-1-2]New Method of Extracting Inversion Layer Thickness and Charge Profile and Its Impact on Scaled MOSFETs
Tetsu TANAKA, Toshihiro SUGII, Chenming HU(1.Fujitsu laboratories LTD., 2.Department of Electrical Engineering and Computer Sciences, University of California at Berkeley)
