1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
[A-1-3]A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
Steve S. Chung, G. H. Lee, S. M. Cheng, M. S. Liang(1.Department of Electronic Engineering, National Chiao Tung University, 2.Taiwan Semiconductor Manufacturing Co.)
