1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
[A-1-4]A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement
S. M. Cheng, Steve S. Chung, M. S. Liang(1.Department of Electronic Engineering, National Chiao Tung University, 2.Taiwan Semiconductor Manufacturing Co.)
