1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
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International Conference on Solid State Devices and Materials
1996 International Conference on Solid State Devices and Materials

1996 International Conference on Solid State Devices and Materials

Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan

[A-4-4]Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs

Akio NISHIDA, Eiichi MURAKAMI, Shin'ichiro KIMURA(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1996.A-4-4
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