1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
[D-1-3]New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
Tohru OKA, Kiyoshi OUCHI, Kazuhiro MOCHIZUKI, Tohru NAKAMURA(1.Central Research Laboratory, Hitachi, Ltd.)
