1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
[D-2-3]The Change of Mo/GaAs Schottky Characteristics by the Forward Gate Current
Tomoyuki OHSHIMA, Ryoji SHIGEMASA, Tamotsu KIMURA(1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)
