1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
1996 International Conference on Solid State Devices and Materials
Aug 26 - Aug 29, 1996Pacifico Yokohama, Yokohama, Japan
[D-2-4]Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
Teketomo SATO, Shouichi UNO, Tamotsu HASHIZUME, Hideki HASEGAWA(1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)
