1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
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International Conference on Solid State Devices and Materials
1997 International Conference on Solid State Devices and Materials

1997 International Conference on Solid State Devices and Materials

Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan

[A-1-4]Hopping-Conduction Energy of Holes in SiO2 Determined Accurately by Molecular Orbital Calculation

Yoshiaki Takemura, Jiro Ushio, Takuya Maruizumi, Masanobu Miyao(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1997.A-1-4
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