[P-1]Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors -Seeking Blue Emission-
Isamu Akasaki(1.Department of Electrical and Electronic Engineering, Meijo University)
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
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1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
You can search for presentations in this event.
SearchSearch Results(287)
[P-2]Silicon-Based IC Technology for Giga-Scale Integration Era
Yoshio Nishi(1.Texas Instruments Incorporated)
[A-1-1]Reliability and Scaling of Thin Gate Oxide
Chenming Hu(1.Dept. of Electrical Engineering & Computer Sciences, University of California)
[A-1-2]Root Cause Analysis of Thin Gate Oxide Degradation during Fabrication of Advanced CMOS ULSI Circuits
Sang U. Kim(1.Sematech)
[A-1-3]Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
Takuya Maruizumi, Jiro Ushio, Masanobu Miyao(1.Central Research Laboratory, Hitachi, Ltd.)
[A-1-4]Hopping-Conduction Energy of Holes in SiO2 Determined Accurately by Molecular Orbital Calculation
Yoshiaki Takemura, Jiro Ushio, Takuya Maruizumi, Masanobu Miyao(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-1]Highly Reliable SiO2 Films Formed by UV-O2 Oxidation
Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Makoto Hirayama(1.Mitsubishi Electric Corporation, ULSI Laboratory)
[A-2-2]Highly Reliable Interpoly Oxide Using ECR N2O-Plasma for Next Generation Flash Memory
Nae-In Lee, Jin-Woo Lee, Sung-Hoi Hur, Hyoung-Sub Kim, Chul-Hi Han(1.Department of Electrical Engineering, KAIST, 2.Semiconductor R & D Center, Samsung Electronics Co. Ltd.)
[A-2-3]Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure
Kohichi Morino, Seiichi Miyazaki, Masataka Hirose(1.Department of Electrical Engineering, Hiroshima University)
[A-2-4]Electron Beam Induced Damage of MOS Gate Oxide
Morikazu Konishi, Michitaka Kubota, Kaoru Koike(1.Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sory Corp.)
[A-2-5]Scaling of Flash Memory Interpoly Dielectrics Using NH3-Annealed CVD SiO2 Single-Layer Films
T. Kobayashi, A. Katayama, H. Kume, K. Kimura(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-6]The Effect of IPA Adsorption on Thin Oxide
Kumi Motai, Toshihiko Itoga, Takashi Irie(1.Central Research Laboratory, Hitachi Ltd.)
[B-1-1]Electronic Structure and Defects of Lead-Zirconium Titanate (PZT) and Strontium Bismuth Tantalate Ferroelectrics
J Robertson(1.Engineering Department, Cambrige University)
[B-1-2]Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba,Sr)TiO3 Capacitors
Masayoshi Tarutani, Junji Tanimura, Tsuyoshi Horikawa, Muneyoshi Suita, Takaaki Kawahara, Mikio Yamamuka, Hiroaki Sumitani, Kouichi Ono(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation)
[B-1-3]An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond
Yoo-Sang Hwang, Jin-Woo Lee, Sung-Yung Lee, Bon-Jae Koo, Dong-Jin Jung, Yoon-Soo Chun, Mi-Hyang Lee, Dong-Won Shin, Soo-Ho Shin, Sang-Eun Lee, Byung-Hee Kim, Nam-Soo Kang, Ki-Nam Kim(1.Technology Development, Semiconductor R&D Center, Samsung Electronics Co.)
[B-1-4]A Proposal of Pt/SrBi2Ta2O9/CeO2/Si Structure for Non Destructive Read Out Memory Devices
Dong Suk Shin, Yong Hee Han, Yong Tae Kim(1.Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 2.Korea Department of Materials Science, Korea University)
[B-1-5]The Effect of Capacitor Electrode Contaminant on High Density DRAM's Device Characteristics
Y. Kawai, E. Uchida, M. Itoh, M. Yoshimaru, J. Ida(1.Oki Electric Industry Co., Ltd. VLSI R&D Center)
[B-2-1]Properties of Highly Oriented Ta2O5 on Metal Electrodes
Koichi Kishiro, Nobuhiko Inoue, Shih-Chang Chen, Masaki Yoshimaru(1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)
[B-2-2]Deposition of Epitaxial Yittria-Stabilized Zirconia (YSZ) on Si(100) and Simultaneous Growth of Amorphous SiO2 Interlayer
Tomonobu HATA, Yutaka MASUDA, Shin'ichi NAKANO, Kimihiro SASAKI, Yohko HANEDA, Kiyotaka WASA(1.Department of Electrical and Computer Engineering, Kanazawa University, 2.RITE)
[B-2-3]Fine-Grained SrBi2Ta2O9 Thin Films by Low Temperature Annealing
Nobuhito OGATA, Yasuyuki ITO, Kazuya ISHIHARA, Masaya NAGATA, Hitoshi URASHIMA, Akira OKUTOH, Shinobu YAMAZAKI, Shun MITARAI, Jun KUDO(1.Functional Devices Laboratories, Sharp Corporation)
[B-2-4]Propose of New Mixture Target for Low Temperature and High Rate Deposition of PZT Thin Films by Reactive Sputtering
Tomonobu HATA, WeiXiao ZHANG, Shinya KAWAGOE, Kimihiro SASAKI(1.Department of Electrical and Computer Engineering, Kanazawa University)
[B-2-5]New Low Temperature Processing of MOCVD-Bi4Ti3O12 Thin Films Using BiOx Buffer Layer
Takeshi KIJIMA, Maho USHIKUBO, Hironori MATSUNAGA(1.Functional Devices Laboratories, SHARP Corporation)
[C-1-1]1.3μm Semiconductor Lasers on InGaAs Ternary Substrates Toward Low-Threshold and Temperature Insensitive Operation
H. Shoji, K. Otsubo, T. Kusunoki, T. Suzuki, T. Uchida, T. Fujii, Y. Nishijima, K. Nakajima, H. Ishikawa(1.Fujitsu Laboratories Ltd.)
[C-1-2]Index-Guide GaInNAs Laser Diode for Optical Communications
Shin'ichi Nakatsuka, Masahiko Kondow, Takeshi Kitatani, Yoshiaki Yazawa, Makoto Okai(1.Central Research Lab. Hitachi Ltd., RWCP Optical Interconnection Hitachi Lab.)
[C-1-3]High Temperature Operation of a 1.3-μm Spot-Size-Converter Integrated Laser Diode (SS-LD)
Yuichi Tohmori, Yoshio Itaya(1.NTT Opto-electronics Laboratories)
[C-1-4]Photonic Integrated Circuits Fabricated by Bandgap-Energy-Controlled Selective MOVPE Technique
Tatsuya Sasaki, Masayuki Yamaguchi, Keiro Komatsu(1.Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation, 2.ULSI Device Development Labs., NEC Corp.)
[C-2-1]Wafer Bonding of InP to Si and Its Application to Optical Devices
Hiroshi Wada, Takeshi Kamijoh(1.Optoelectronics Oki Laboratory, Real World Computing Partnership c/o Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)
[C-2-2]Selective Oxidation of AlGaAs/GaAs Structure and Its Application to Vertical Cavity Lasers
Gey Mo Yang, Dae Ho Lim, Jong-Hee Kim, Kee Young Lim, Hyung Jae Lee(1.Semiconductor Physics Research Center, Chonbuk National University)
[C-2-3]VCSEL and Its Applications for Optical Interconnection and Switch
Hideo Kosaka(1.NEC Optoelectronics and High Frequency Device Research Laboratories)
[C-2-4]Ultrafast Optical Pulse Generation Using Semiconductor Devices
Yoh OGAWA, Saeko OSHIBA, Shin ARAHIRA(1.Semiconductor Technology Laboratory, R&D Group, Oki Electric Industry Co., Ltd.)
[D-1-1]New Doping Method in Semiconductors Proposed by ab initio Electronic Structure Calculation
H. Katayama-Yoshida, T. Yamamoto(1.Department of Condensed Matter Physics The Institute of Scientific and Industrial Research Osaka University)
[D-1-2]Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
Hiroshi Yamaguchi, Yoshiro Hirayama(1.NTT Basic Research Laboratories)
[D-1-3]Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs
Kanji Takeuchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga(1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)
[D-1-4]Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
Hiroshi Okamoto, Kunishige Oe(1.NTT Opto-electronics Laboratories)
[D-1-5]RHEED Oscillation-Based Optimization of Growth Conditions for Gas-Source MBE Growth of InGaP Using Tertiarybutylphosphine
Hironobu Sai, Hajime Fujikura, Hideki Hasegawa(1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)
[D-1-6]LPE Growth of (3GaAs)x{(3ZnSe)y(Ga2Se3)1-y}1-x Alloy
Masanori Kaji, Hironobu Katsuno, Masakazu Kimura, Akira Tanaka, Tokuzo Sukegawa(1.Research Institute of Electronics, Shizuoka University)
[D-1-7]Polycrystalline CuGaSe2 Thin Films Growth by CVD with I2 as Transport Agent
A. Jager-Waldau, N. Meyer, T. Weiss, S. Fiechter, M. Ch. Lux-Steiner, K. Tempelhoff, W. Richter(1.Hahn-Meitner-Institut Berlin, 2.Institut fur Festkorperphysik PN 6-1, Technische Universitat Berlin)
[D-2-1]Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
Takuto Tsuji, Hiroo Yonezu, Mikihiro Yokozeki, Yasufumi Takagi, Naoki Ohshima(1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)
[D-2-2]Band-Gap Narrowing in Carbon Doped GaAs with Various Substrate Orientations Studied by Photoluminescence Spectroscopy
S. Cho, D. Lee, E. K. Kim, S.-K. Min(1.Semiconductor Materials Research Center Korea Institute of Science and Technology)
[D-2-3]Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
Kwang-Ki Choi, Tae-Yeon Seong, Dong-Ho Lee, Yong Sun Shon, Chung Tae Kim(1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), 2.Memory R&D Division, Hyundai Electronics Co., Ltd.)
[D-2-4]Electric Field Induced Recombination Centers in GaAs
Atsushi Kawaharazuka, Yoshiji Horikoshi(1.School of Science and Engineering, Waseda University)
[D-2-5]In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
Tamotsu Hashizume, Yasuhiko Ishikawa, Toshiyuki Yoshida, Hideki Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)
[D-2-6]Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity
B. Adamowicz, T. Saitoh, T. Hashizume, H. Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University, 2.Institute of Physics, Silesian Technical University)
[A-3-1]Reliability Concern of Ultra-Thin Gate Oxides
Akira Toriumi, Hideki Satake(1.Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation)
[A-3-2]Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
Tanya Nigam, Michel Depas, Robin Degraeve, Marc M. Heyns, Guido Groeseneken(1.IMEC)
[A-3-3]An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current
Kenji Okada(1.ULSI Process Technology Development Center, Matsushita Electronics Corporation)
[A-3-4]Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces
Hikaru Kobayashi, Yoshiyuki Yamashita, Akira Asano, Yoshihiro Nakato, Yasushiro Nishioka(1.PRESTO, Japan Science and Technology Corporation, 2.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University, 3.Texas Instruments Tsukuba Research & Development Center Ltd.)
[A-4-1]Drain Disturb Relaxation by Substrate bias Selecting Scheme for Sector Erase Flash Memory with Conventional Single Stacked Gate Cell Structure
M. Yoshimi, N. Shinmura, T. Tanigami, K. Hakozaki, S. Sato, K. Iguchi(1.VLSI Development Laboratories, IC Tenri Group, SHARP Corporation)
[A-4-2]Byte Erasable NOR Flash EEPROM with Double Diffused Drain for High Programming Speed
M. K. Cho, K. H. Yum, K. S. Kim, J. H. Choi, S. T. Ahn, Dae M. Kim(1.Memory Division, Semiconductor Business, Samsung Electronics Co., LTD., 2.Department of Electrical Eng., Pohang University of Science and Technology)
[A-4-3]Suppression of Hole Injection into the Tunnel Oxides of Flash Memories
Yutaka Okuyama, Takashi Kobayashi, Katsutaka Kimura(1.Central Research Laboratory, Hitachi Ltd.)
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