1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
[A-2-4]Electron Beam Induced Damage of MOS Gate Oxide
Morikazu Konishi, Michitaka Kubota, Kaoru Koike(1.Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sory Corp.)
