1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
[A-4-2]Byte Erasable NOR Flash EEPROM with Double Diffused Drain for High Programming Speed
M. K. Cho, K. H. Yum, K. S. Kim, J. H. Choi, S. T. Ahn, Dae M. Kim(1.Memory Division, Semiconductor Business, Samsung Electronics Co., LTD., 2.Department of Electrical Eng., Pohang University of Science and Technology)
