International Conference on Solid State Devices and Materials
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1997 International Conference on Solid State Devices and Materials
Sep 16
- Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan
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1997 International Conference on Solid State Devices and Materials
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1997 International Conference on Solid State Devices and Materials
Sep 16
- Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan
[D-1-1]
New Doping Method in Semiconductors Proposed by ab initio Electronic Structure Calculation
H. Katayama-Yoshida, T. Yamamoto(1.Department of Condensed Matter Physics The Institute of Scientific and Industrial Research Osaka University)
https://doi.org/10.7567/SSDM.1997.D-1-1
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