1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
[D-1-2]Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
Hiroshi Yamaguchi, Yoshiro Hirayama(1.NTT Basic Research Laboratories)
