1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
[D-2-1]Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
Takuto Tsuji, Hiroo Yonezu, Mikihiro Yokozeki, Yasufumi Takagi, Naoki Ohshima(1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)
