1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
[D-2-2]Band-Gap Narrowing in Carbon Doped GaAs with Various Substrate Orientations Studied by Photoluminescence Spectroscopy
S. Cho, D. Lee, E. K. Kim, S.-K. Min(1.Semiconductor Materials Research Center Korea Institute of Science and Technology)
