1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
1997 International Conference on Solid State Devices and Materials
Sep 16 - Sep 19, 1997ACT CITY Hamamatsu, Hamamatsu, Japan
[D-2-5]In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
Tamotsu Hashizume, Yasuhiko Ishikawa, Toshiyuki Yoshida, Hideki Hasegawa(1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)
